• Load Lock Type Sputtering Device

    Load Lock Type Sputtering Device

    Features

    • Our original spatter cathode is equipped
    • Compatible with moving magnets and enables all side erosion
    • Our original rapid elevating temperature substrate heating mechanism is equipped to achieve a substrate temperature of 900 ° C
    • Fast and stable reactive sputtering film formation is possible with plasma analysis and feedback control from the emission analysis system
    • Compatible with low temperature process such as lift offs
    • Compatible with tray transportation
    • Compatible with combinations such as CVD room, deposition room, plasma cleaning room and more

    Usage

    • Semiconductor
    • MEMS
    • Electronic components
    • Optical components
    • Vehicle components

    Specification

    Substrate Size φ12 inch maximum
    Sputtered Cathode Magnetron Method
    Target shutter
    Spatter Power Supply RF or DC
    Process Gas Ar, O2, N2, etc.
    Substrate Stage Substrate heating: 700 ° C (substrate surface)
    Rotation: 20rpm maximum
    Vacuum Exhaust Configuration 1: TMP+DP
    Configuration 2: CP+DP
    Pressure Control APC control
    APC control Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Vacuum transfer robot
    Optional Substrate heating 900 ℃
    Board bias (RF or DC)
    Substrate cooling (low temperature film formation)
    Moving magnet
    Cathode for magnetic material target
    Emission analysis system
    Tray transportation
    Q-MASS and more
  • Multi Sputtering Device

    Multi Sputtering Device

    Features

    • Our original spatter cathode is equipped
    • 3 axis mechanism (elevation, revolution, rotation) is equipped on the substrate stage to achieve an even film thickness distribution
    • Our original rapid elevating temperature substrate heating mechanism is equipped, achieving a substrate temperature of 900 ° C
    • Up to 4 sputter cathodes are equipped, enabling laminated film formation of metal films, oxide films and more
    • Applicable for tray transportation
    • Applicable for combinations such as CVD room, deposition room, plasma cleaning room and more

    Usage

    • Semiconductor
    • MEMS
    • Electronic components
    • Optical components
    • Vehicle components

    Specification

    Substrate Size φ12 inch maximum
    Sputtered Cathode Magnetron method
    Target shutter
    Spatter Power Supply RF or DC
    Process Gas Ar, O2, N2, etc.
    Substrate Stage Substrate heating: 700 ° C (substrate surface)
    Rotation: 30 rpm
    Revolution: 10 rpm
    Elevation: 50mmst
    Vacuum Exhaust Configuration 1: TMP + DP
    Configuration 2: CP + DP
    Pressure Control APC control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Vacuum transfer robot
    Optional Substrate heating 900 ℃
    Board bias (RF or DC)
    Substrate cooling (low temperature film formation)
    Moving magnet
    Cathode for magnetic material target
    Emission analysis system
    Tray transportation Q-MASS and more
  • Batch Type Sputtering Device for Solid Objects

    Batch Type Sputtering Device for Solid Objects

    Features

    • Our original spatter cathode is equipped
    • 4 axis mechanism (elevation, revolution, rotation, tilt) is equipped on the work stage to achieve high coverage in solid objects' film formation
    • Up to 3 sputter cathodes are equipped, enabling laminated film formation of metal films, oxide films and more

    Usage

    • MMS
    • Electronic components
    • Optical components
    • Vehicle components

    Specification

    Substrate Size φ5 inchx40mm high maximum
    Please contact us as it depends on the shape, size, material and more.
    Sputtered Cathode Magnetron method
    Target shutter
    Spatter Power Supply RF or DC
    Process Gas Ar, O2, N2, etc.
    Work Stage Heating temperature: 500 ° C (substate surface)
    Rotation: 30 rpm
    Revolution: 10 rpm
    Elevation: 40mmst
    Tilt mechanism: ± 30 °
    Substrate bias (RF or DC)
    Vacuum Exhaust TMP + RP
    Pressure Control APC control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Work Equipping Top lid that elevates, turns, opens and shuts
    Optional Substrate cooling (low temperature film formation)
    Moving magnet
    Cathode for magnetic material target
    Dry pump
    Emission analysis system
    Q-MASS and more
  • Ultra High Temperature Sputtering Device for Thin Film MEMS

    Ultra High Temperature Sputtering Device for Thin Film MEMS
  • Batch Type Sputtering Device for Thin Film MEMS

    Batch Type Sputtering Device for Thin Film MEMS
  • IBS Device for Research and Development

    IBS Device for Research and Development
  • Multi Compound Sputtering Device
    * Operating at a coin laundry in Tohoku University

    Multi Compound Sputtering Device * Operating at a coin laundry in Tohoku University
  • Sputtering Device with GB for Organic EL

    Sputtering Device with GB for Organic EL
  • Load Lock Type Dual Sputtering Device

    Load Lock Type Dual Sputtering Device
  • Batch Type Ternary Sputtering Device for Research and Development

    Batch Type Ternary Sputtering Device for Research and Development