• RTA Device

    RTA Device

    Features

    • Applicable from decompression process to pressurisation process (0.9MPaG)
    • Applicable for high-speed thermal oxidation, crystallisation, annealing process and more to the substrate surface.
    • Achieves excellent substrate temperature distribution and gas flow method
    • Applicable for tray transportation

    Usage

    • Semiconductor
    • MEMS
    • Electronic components

    Specification

    Wafer Size Up to φ12 inch
    Reactant Gas O2, N2, H2O (optional)
    Substrate Heating Temperature Up to 1000 ° C (substrate surface)
    Heat Source Halogen Lamp
    Heating Rate Up to 150 ° C/sec
    Vacuum Exhaust DP
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Air transfer robot
    Cooling stage
  • Vacuum Heating and Drying Furnace

    Vacuum Heating and Drying Furnace

    Features

    • Operating temperature range: Maximum 450 ° C
    • Ultimate pressure: 10Pa
    • Automatic drying process recipe: 30 variations
    • Sample shelf: 2 tiers

    Usage

    • Vacuum drying of sputter target
    • Vacuum drying of vacuum components
    • Vacuum drying of jigs and more

    Specification

    Effective Dimensions 600W x 500D x 200H
    Sample Shelf (1 tier) 2 tiers
    Heating Temperature Up to 450 ℃
    Vacuum Exhaust Gas DP
    Chamber Cooling Water cooling
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External Memory or PC