-
Hi pressure RTA System
Features
- Applicable from vacuum process to Hi pressure process (0.9MPaG)
- Applicable for high-speed thermal oxidation, crystallisation, annealing process and more to the substrate surface.
- Superior substrate temperature uniformity and gas flow method
- Applicable for tray transportation
Applications
- Semiconductor
- MEMS
- Electronic components
Specification
Wafer Size Up to φ12 inch Process Gas O2, N2, H2O (optional) Substrate Heating Temperature Up to 1000 ° C (substrate surface) Heat Source Halogen Lamp Heating Rate Up to 150 ° C/sec Vacuum Exhaust DP Control Operation Control: PLC
Operation: Touch panel or PCData Logging External memory or PC Substrate Transfer Atmospheric transport robot -
Vacuum Drying Oven System
Features
- Operating temperature range: Maximum 450 ° C
- Ultimate pressure: 10Pa
- Process recipe : 30
- Drying shelf: 2 stages
Applications
- Vacuum drying of sputter target
- Vacuum drying of vacuum components
- Vacuum drying of jigs and more
Specification
Effective Dimensions 600W x 500D x 200H Drying shelf 2 stages Heating Temperature Up to 450 ℃ Vacuum Exhaust Gas DP Chamber Cooling Water cooling Control Operation Control: PLC
Operation: Touch panel or PCData Logging External Memory or PC