• Dry Etching Device

    Dry Etching Device

    Features

    It is a fully automatic mass production device that can continuously process substrates up tp φ12 inch.
    It is also a versatile device that enables etching, ashing, and ion cleaning by switching gas types and plasma modes.

    Features

    • Switching RIE mode and DP mode is possible
    • Reduction of metal contamination by special surface treatment
    • Footprint conservation
    • Double frequency independent application method
    • Ultra low temperature cooling stage

    Usage

    • Semiconductor
    • MEMS
    • Electronic Components

    Specification

    Size φ12 inch maximum
    Plasma Source CCP type
    Vacuum Exhaust Low vacuum process: MBP+DP
    High vacuum process: TMP+DP
    Pressure Control APC control
    Process Gas F system, Cl2, Ar, O2, etc.
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Atmospheric or vacuum transfer robot
    Optional Double frequency independent application method
    Ultra low temperature cooling stage
    Electrostatic chuck stage
    Mechanical chuck stage
    Emission analysis system
    Gas detector
    Cylinder cabinet and more
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