• Oxidation Film/ Nitride Film Plasma CVD Device

    Oxidation Film/ Nitride Film Plasma CVD Device

    Features

    • Achieves low stress, high hardness, and high insulation by the double frequency independent application method
    • Achieves great film thickness distribution and reproducibility
    • Reduction of metal contamination by a special surface treatment
    • Significant particle reduction and improved productivity with radical plasma cleaning system
    • Controls wide range of film characteristic
    • Plenty of accumulated data
    • Applicable for tray transportation

    Usage

    • Semiconductor
    • MEMS
    • Organic EL
    • Solar Cell
    • Electronic Components
    • Optical Components

    Specification

    Substrate Size φ12 inch maximum
    Film Formation Process SiH4 system: SiO2, SiNx, SiON, a-Si
    TEOS/ TMOS system: SiO2
    Plasma Source CCP type
    Substrate Heating Temperature 300 ° C maximum (substrate surface)
    Vacuum Exhaust Low vacuum process: MBP+DP
    High vacuum process: TMP+DP
    Pressure Control Advanced process control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Vacuum transfer robot
    Option High temperature process over 300 ℃
    Emission analysis system
    Exhaust gas treatment device
    Gas detector
    Cylinder cabinet and more
  • DLC Coating Device

    DLC Coating Device

    Features

    • The film formation source can be selected from RF plasma CVD method and ionization vapor deposition method
    • Substrate heating source can be selected from water cooled type and heated type
    • Achieves great film thickness distribution and reproducibility
    • It can be film deposited on various substrate materials
    • Controls wide range of film characteristic
    • Plenty of accumulated data
    • Applicable for tray transportation

    Usage

    • Semiconductor
    • Electronic components
    • Optical components
    • Vehicle components
    • Medical components

    Specification

    Substrate Size Round φ12 inch maximum
    Square 310mm x 375mm maximum
    Film Formation Gas DLC: Liquid・Gas source
    Fluoride DLC: Liquid Source
    Self Cleaning Gas O2, Ar, etc.
    Substrate Heating Temperature 300 ° C maximum (substrate surface)
    Vacuum Exhaust Low vacuum process: MBP+DP
    High vacuum process: TMP+DP
    Pressure Control APC control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Vacuum transfer robot
    Option High temperature process over 300 ℃
    Emission analysis system
    Exhaust gas treatment Device
    Gas detector
    Cylinder cabinet and more
  • Carbon Nano Tube Synthesizer

    Carbon Nano Tube Synthesizer

    Features

    • Fully automated CNT synthesis is possible
    • Substrate plasma cleaning system is equipped
    • Achieves great substrate temperature distribution and gas flow method
    • Achieves great film thickness distribution and reproducibility
    • Plenty of accumulated data

    Usage

    • Energy related
    • Material related
    • Bio related
    • Nano technology related
    • Electronics related

    Specification

    Substrate Size φ12 inch maximum
    CNT Syngas CH system, H2
    Substrate Heating Temperature 800 ° C maximum (substrate surface)
    Vacuum exhaust RP
    Pressure Control APC control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Optional Substrate automatic transfer system
    Gas detector
    Cylinder cabinet and more
  • CVD Device for Solid Objects

    CVD Device for Solid Objects

    Features

    • Chamber volume 1m3
    • Original plasma control method
    • Multistage mass processing is possible
    • Simple structure with high versatility
    • It can be film deposited on various product materials
    • Controls wide range of film characteristic
    • Plenty of accumulated data

    Usage

    • Various tools
    • Sliding components
    • Adornments
    • Vehicle components
    • Machine components

    Specification

    Work Size Please contact us as it depends on the shape, size and material.
    Chamber Size 1m×1m×1m
    Film Types that can be Deposited DLC, Fluorine DLC, SiOx, SiON
    Self Cleaning Gas O2, Ar, etc
    Vacuum Exhaust MBP+RP
    Pressure Control APC control
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Optional Work dependent electrode
    Gas detector
    Cylinder cabinet and more
  • Plasma CVD Device for "PET Bottles"

    Plasma CVD Device for "PET Bottles"

    Overview

    It is a film formation device specialising in DLC coating on "PET bottle" (Japanese plastic bottles); a widely used material for resin containers. It is done by applying our highly skilled plasma CVD process technology.
    By applying a submicron order DLC thin film coating to the inner surface of plastic bottles, it prevents flavour degradation due to oxidation and elution of carbonic acid components. It also lowers distribution costs by reducing the weight of the container.

    Usage

    • We can suggest various equipment configurations depending on the required production quantity.
    • It can be coated up to 3L containers
    • Please contact us for containers larger than 3L
    • Please contact us for resin materials other than PET resin
    • Please contact us regarding metal materials
  • HDD Media
    Ultra Thin Film DLC Double Sided Film Formation Unit

    HDD Media Ultra Thin Film DLC Double Sided Film Formation Unit
  • HDD Head
    DLC Film Formation Device Multi Chamber Specification

    HDD Head DLC Film Formation Device Multi Chamber Specification
  • HDD Head
    DLC Film Formation Device Batch Specification

    HDD Head DLC Film Formation Device Batch Specification
  • Road Lock Type Plasma CVD Device for Research and Development

    Road Lock Type Plasma CVD Device for Research and Development
  • Plasma CVD Device for Metal Containers

    Plasma CVD Device for Metal Containers
  • Plasma CVD Device for Medical Containers

    Plasma CVD Device for Medical Containers
  • Plasma CVD Device for Solid Objects

    Plasma CVD Device for Solid Objects
  • φ12 Inch Compatible ALD Device for Basic Research and Development

    φ12 Inch Compatible ALD Device for Basic Research and Development
  • ICP Type MOCVD Device

    ICP Type MOCVD Device
  • Plasma CVD Device for Solar Cells

    Plasma CVD Device for Solar Cells
  • Glass Substrate Compatible Mass Production Type
    Multi Chamber Specification Plasma CVD Device

    Glass Substrate Compatible Mass Production Type Multi Chamber Specification Plasma CVD Device