• Dry Etching System

    Dry Etching System

    Features

    It is a fully automatic mass production system that can continuously process substrates up to φ12 inch.
    It is also a versatile system that enables etching, ashing, and ion cleaning by switching gas types and plasma modes.

    Features

    • RIE mode and DP mode can be selected
    • Reduction of metal contamination by special surface treatment
    • Small footprint
    • Double frequency independent application method
    • Ultra low temperature cooling stage

    Applications

    • Semiconductor
    • MEMS
    • Electronic Components

    Specification

    Size φ12 inch maximum
    Plasma Source CCP type
    Vacuum Exhaust Low vacuum process: MBP+DP
    High vacuum process: TMP+DP
    Pressure Control APC
    Process Gas Various fluorine gases,Cl2, Ar, O2, etc.
    Control Operation Control: PLC
    Operation: Touch panel or PC
    Data Logging External memory or PC
    Substrate Transfer Atmospheric or vacuum transfer robot
    Option Double frequency independent application method
    Ultra low temperature cooling stage
    Electrostatic chuck stage
    Mechanical chuck stage
    Plasma emission monitor
    Gas detector
    Cylinder cabinet and more

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  • Batch Type Ashing System

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